High efficiency and high quality grinding of SiC wafers realized.
The grain spacing required for good biting of workpieces while maintaining the strength has been realized by bonding diamond grains and vitrified bond at an appropriate ratio.
Continuous grinding of single crystal SiC wafers that have been difficult to grind with convectional wheels is now possible.
In particular, the wheel that uses superabrasive grains enables grinding at the same feed rate as when grinding silicon wafers and ultra-smooth surfaces can be produced.
Characteristics
- Continuous grinding of single crystal SiC wafers is possible. High quality grinding shortens the post-process CMP time significantly.
