High efficiency and high quality grinding of SiC wafers realized.
- The grain spacing required for good biting of workpieces while maintaining the strength has been realized by bonding diamond grains and vitrified bond at an appropriate ratio.
- Continuous grinding of single crystal SiC wafers that have been difficult to grind with convectional wheels is now possible.
- In particular, the wheel that uses superabrasive grains enables grinding at the same feed rate as when grinding silicon wafers and ultra-smooth surfaces can be produced.
Characteristics
- Continuous grinding of single crystal SiC wafers is possible. High quality grinding shortens the post-process CMP time significantly.
